TGAN60N65F2DS
TGAN60N65F2DS insulated gate bipolar transistor is made by the second generation field stop II process of Terreno. It is 650V, has low switching loss, is suitable for multiple temperature ranges, can operate at 175 ℃, is easy to operate in parallel, complies with ROHS standard and has obtained JEDEC qualification certification. The product can be used in UPS, electric welding machine, inverter, solar energy and other fields.
Copyright ? 上海道徑電子科技有限公司 All Rights Reserved 滬ICP備05064014號-1 網站設計:JCE
